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DISCRETE SEMICONDUCTORS
DATA SHEET
KM110B/2 Magnetic field sensor
Preliminary specification File under Discrete Semiconductors, SC17 November 1994
Philips Semiconductors
Philips Semiconductors
Preliminary specification
Magnetic field sensor
DESCRIPTION The KM110B/2 is a sensitive magnetic field sensor, employing the magnetoresistive effect in thin-film permalloy. A Ferroxdure FXD100 magnet mounted on the back of the sensor package provides an auxiliary field of 3.6 kA/m in the x-direction of the sensor. Typical applications for the KM110B/2 are current measurement, linear position measurement, rotational speed detection of magnetic pole wheels as well as magnetic field measurement. The sensor can be operated at any frequency between DC and 1 MHz. PINNING PIN 1 2 3 4 SYMBOL +VO GND -VO +VCC DESCRIPTION output voltage ground output voltage supply voltage
Marking: KMZ10B PHDxx. x
KM110B/2
y
MLB874
1
23
4
Fig.1 Simplified outline.
QUICK REFERENCE DATA SYMBOL VCC Tbridge Hy S Rbridge Voffset PARAMETER DC supply voltage bridge operating temperature magnetic field strength sensitivity bridge resistance offset voltage - -40 -2.2 - 1.6 -0.5 MIN. 5 - - 3.6 2.1 - TYP. - 150 +2.2 - 2.6 +0.5 MAX. V C kA/m mV V ---------------kA m k mV/V UNIT
CIRCUIT DIAGRAM
MLB875
handbook, full pagewidth
4 VCC
3 -VO
2 GND
1 +VO
Fig.2 Simplified circuit diagram.
November 1994
2
Philips Semiconductors
Preliminary specification
Magnetic field sensor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Ptot Tstg Tbridge Note 1. Maximum operating temperature of the thin-film permalloy. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient 180 VALUE PARAMETER DC supply voltage total power dissipation storage temperature bridge operating temperature up to Tamb = 130 C; see Fig.5 note 1 CONDITIONS - - -40 -40 MIN. 12 120 +150 +150 MAX.
KM110B/2
UNIT V mW C C
UNIT K/W
CHARACTERISTICS Tamb = 25 C; VCC = 5 V unless otherwise specified. SYMBOL Hy S TCVO PARAMETER magnetic field strength sensitivity temperature coefficient of output voltage note 1 open circuit; notes 2 and 3 VCC = -5 V; Tamb = -25 to +125 C ICC = 3 mA; Tamb = -25 to +125 C Rbridge TCRbridge Voffset TCVoffset FL bridge resistance temperature coefficient of bridge resistance offset voltage temperature coefficient of offset voltage linearity deviation of output voltage Tbridge = -25 to +125 C Hy = 0 to 1 kA/m Hy = 0 to 1.6 kA/m Hy = 0 to 2 kA/m FH f hysteresis of output voltage operating frequency note 4 Tbridge = -25 to +125 C CONDITIONS MIN. -2.2 2.9 - - 1.6 - -0.5 -5 - - - - 0 - 3.6. -0.4 -0.1 - 0.3 - 1.5 - - - - - TYP. MAX. +2.2 4.4 - - 2.6 - +0.5 5 0.5 1.7 2.0 0.5 1 UNIT kA/m mV V ---------------kA m %/K %/K k %/K mV/V (V/V)/K %FS %FS %FS %FS MHz
November 1994
3
Philips Semiconductors
Preliminary specification
Magnetic field sensor
Notes to the characteristics 1. Magnet (Ferroxdure 100) delivers an auxiliary field of Hx = 3.6 kA/m (temperature coefficient: -0.2 %/K). Above 110 C the auxiliary field Hx will be <3.0 kA/m; stable sensor operation may be threatened by disturbing magnetic fields. 2. ( V O at H y = 1.6 kA/m ) - ( V O at H y = 0 ) S = ----------------------------------------------------------------------------------------------------------------- . 1.6 x V CC
KM110B/2
handbook, halfpage S
M N S
Hy Hx
3. The sensitivity increases and decreases linear with the supply voltage, thus the static output voltage is directly proportional to the supply voltage. 4. Sensor bridge response only. When sensing high speed rotation, the operating frequency may be reduced due to eddy current effects.
4 3 2 1
MBD882
M = direction of magnetization. N, S = magnetic poles.
Fig.3 Principle of magnetization.
handbook, halfpage
8
MBD885
handbook, halfpage
125
MBD892
VO (mV/V) 4
Ptot (mW) 100
75 0 50
-4
25
-8 -2 -1 0 1 H y (kA/m) 2
0 0 50 100 150 200 T amb (o C)
Tamb = 25 C; Voffset = 0.
Fig.4 Sensor output characteristic.
Fig.5 Power derating curve.
November 1994
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Philips Semiconductors
Preliminary specification
Magnetic field sensor
PACKAGE OUTLINE
KM110B/2
handbook, full pagewidth
0.35 1.8 max
4.8 max 0.75
0.66 0.56
4.6 4.4 0.65 0.55 1.15 chip
(2)
2.35 2.25
5.2 max
2.0 (1) max
12.7 max
1
2
3
4
1.25 (3x)
0.48 0.40
MBD881
0.4 min
Dimensions in mm. (1) Terminal dimensions uncontrolled within this area. (2) Position of sensor chip.
Fig.6 Outline of KM110B/2.
November 1994
5
Philips Semiconductors
Preliminary specification
Magnetic field sensor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
KM110B/2
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
November 1994
6

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